ARCHIVES
VOL. 12, ISSUE 4 (2025)
A comprehensive review of SOI-CMOS and FINFET technologies in modern VLSI design
Authors
Dr. Lokeshwar Patel, Subodh Dewangan
Abstract
Silicon-On-Insulator (SOI) technology, once
envisioned as a futuristic innovation, has now solidified its position as a
leading solution for designing low-voltage integrated circuits. Significant
advances in the fabrication of single-crystal SOI substrates have paved the way
for the production of high-performance devices. Over the past decade, SOI
MOSFETs have demonstrated exceptional capabilities across high-frequency
applications, including the use of high-K/metal gate materials, VLSI systems,
analog and digital ICs, and mixed-signal platforms. The advantages of SOI
include gate length scaling down to 22 nm, improved leakage current
suppression, and immunity from latch-up effects. This review explores SOI
technology in conjunction with MOSFET architectures, analyzing fabrication
methods, performance benefits, key challenges, and the future trajectory of
both SOI-MOS and FinFET device technologies.
Download
Pages:72-81
How to cite this article:
Dr. Lokeshwar Patel, Subodh Dewangan "A comprehensive review of SOI-CMOS and FINFET technologies in modern VLSI design". International Journal of Multidisciplinary Research and Development, Vol 12, Issue 4, 2025, Pages 72-81
Download Author Certificate
Please enter the email address corresponding to this article submission to download your certificate.