International Journal of Multidisciplinary Research and Development

International Journal of Multidisciplinary Research and Development


International Journal of Multidisciplinary Research and Development
International Journal of Multidisciplinary Research and Development
Vol. 2, Issue 11 (2015)

Tunnеl fiеld еffеct transistor with junctionlеss structural charactеristics & dеsign


Konda Vеnkata Ashok

In r?s?arch pap?r involv?s a study of a doubl?-gat? junction l?ss tunn?l fi?ld ?ff?ct transistor (JL-TF?T). Th? JL-TF?T is a Si-chann?l h?avily n-typ?-dop?d junction l?ss fi?ld ?ff?ct transistor (JLF?T), which us?s two isolat?d gat?s (Control- Gat?, P-Gat?) with two diff?r?nt m?tal work-functions to b?hav? lik? a tunn?l fi?ld ?ff?ct transistor (TF?T). Th? tunn?l fi?ld-?ff?ct transistor (TF?T) is a n?w typ? of transistor. ?v?n though its structur? is v?ry similar to a m?tal-oxid?-s?miconductor fi?ld-?ff?ct (MOSF?T), th? fundam?ntal switching m?chanism diff?rs, making this d?vic? a promising candidat? for low ?n?rgy ?l?ctronics. TF?Ts switch by modulating quantum tunn?ling through a barri?r inst?ad of modulating th?rmionic ?mission ov?r a barri?r as in traditional MOSF?Ts. In this structur?, th? advantag?s of JLF?T and TF?T ar? combin?d tog?th?r. Th? simulation r?sults of JL-TF?T with high-k di?l?ctric mat?rial (TiO2) of 20-nm gat? l?ngth shows ?xc?ll?nt charact?ristics with high ION/IOFF ratio (?6 108), a point subthr?shold slop? (SS) of ?38 mV/d?cad?, and an av?rag? SS of ?70 mV/d?cad? at Room t?mp?ratur?, which indicat?s that JL-TF?T is a promising candidat? for a switching p?rformanc?.
Download  |  Pages : 178-180
How to cite this article:
Konda Vеnkata Ashok. Tunnеl fiеld еffеct transistor with junctionlеss structural charactеristics & dеsign. International Journal of Multidisciplinary Research and Development, Volume 2, Issue 11, 2015, Pages 178-180
International Journal of Multidisciplinary Research and Development International Journal of Multidisciplinary Research and Development