With the emergence of non-planar CMOS device at the 22nm and beyond manufacturers has started adopting FinFET for high performance process technology. Multigate field-effect transistors (FETs) overcome short channel effect problems because of tighter control of the channel potential by multiple gates wrapped around the body. Amongst multigate FETs, FinFETs have emerged as the best candidate structures from a fabrication perspective. The main objective of this paper, is to study the modeling of different types of FinFETs. In this paper we evaluate the symmetric gate and asymmetric gate work function shorted gate (ASG) FinFETs and independent gate (IG) FinFETs using Sentaurus technology computer aided TCAD.